Plasma processor electrode and plasma processor

ABSTRACT

A plasma processor electrode includes a support member disposed to face to an electrode that holds a substrate to be treated, an electrode plate fixed to the support member and equipped with gas injection holes and a screw hole open and facing to the support member to supply a processing gas through the gas discharge hole into a processing space formed between the electrode plate and the electrode to generate a plasma in the processing space, and a fastening unit that clamps the electrode plate on the support member by fastening the electrode plate to the support member with a screw driven into the screw hole from the support member.

FIELD OF THE INVENTION

The present invention relates to a plasma processor electrode and aplasma processor employing the electrode; and, more particularly, to aplasma etching processor electrode and a plasma etching processor forexecuting an etching process for use in semiconductor substrates, e.g.,under plasma atmosphere.

BACKGROUND OF THE INVENTION

Plasma process techniques, including a plasma etching process, a plasmaCVD process and the like, have been widely applied in manufacturingsemiconductor devices, liquid crystal display devices and the like. Aconventional plasma processor employing the plasma process techniqueshas an upper electrode and a lower electrode so disposed as to face eachother in a processing chamber, and causes a processing gas in theprocessing chamber to become a plasma by applying a high frequency powerto the upper electrode, to thereby feed the plasma to a substrate,mounted on the lower electrode, to be processed. Normally, cooling waterfor cooling the electrode to a desired temperature is supplied to theupper electrode, in addition to the high frequency power and theprocessing gas.

The upper electrode used in the conventional plasma processor will nowbe described with reference to FIGS. 8A-8C. As shown in FIG. 8A, theupper electrode 1 includes an electrode plate 2 made of, e.g., quartzwith a plurality of gas holes 2A dispersedly formed on the surfacethereof, a supporting member 3 made of, e.g., aluminum for supportingthe electrode plate 2 and executing a heat exchange with the electrodeplate 2, and a shield ring 4, in the form of a circular ring, disposedto blockade peripheral portions of the electrode plate 2 and thesupporting member 3.

When the upper electrode 1 is assembled, as shown in FIG. 8B, first ofall, a lower surface of the supporting member 3 is made to come incontact with an upper surface of the electrode plate 2, and then boththe electrode plate 2 and the supporting member 3 are fixed by usingscrews 5. Thereafter, in order to avoid an abnormal discharge orcontamination of metal, as shown in FIG. 8C, the shield ring 4 isdisposed around the electrode plate 2, thereby blocking heads of thescrews 5 which are exposed in the processing chamber.

However, as the electrode plate 2 is normally made of quartz, it is notdesirable to form tapped holes on the electrode plate 2 due to its highstrength, poor workability and the like. Thus in the conventional art,through-holes 2B are normally formed on peripheral portions of theelectrode plate 2, and tapped holes are formed on a side of thesupporting member 3 made of, e.g., aluminum. Consequently, the electrodeplate 2 should be jointed to the supporting member 3 by driving thescrews 5 into the tapped holes on the side of the supporting member 3from a side of the processing chamber (a side of the lower electrode).Furthermore, the screws 5 are required to be isolated from plasma byattaching the shield ring 4 around the electrode plate 2 as describedabove.

In addition, to avoid abnormal discharge and to execute a desiredprocess, the processing chamber needs to be configured such that surfaceirregularities are not provided therein as much as possible. For thepurpose of it, configuration of the joint portion between the electrodeplate 2 and the supporting member 3 become rather complicated, therebyincreasing the manufacturing cost thereof. Furthermore, as thethrough-holes 2B for allowing the screws 5 to pass through are formed onperiphery of the electrode plate 2 or an area therearound, there arelimitations in that the configuration is further complicated asdescribed above, and the outermost diameter (effective gas holediameter), i.e., the diameter of the whole circular area where all thegas holes 2A are disposed, cannot be increased.

SUMMARY OF THE INVENTION

It is, therefore, a primary object of the present invention to provide anovel plasma processor electrode and a novel plasma processor capable ofincreasing the effective gas hole diameter and concealing a jointportion of the electrode plate from plasma completely, and smoothing thesurface area which is in contact with the plasma at low costs.

The object is achieved by the novel plasma processor electrode and theplasma processor employing the same, which are described hereinafter.That is, the plasma processor electrode and the plasma processoremploying the plasma processor electrode includes: a supporting memberarranged to face a supporting electrode for supporting a substrate to beprocessed; an electrode plate, mounted to the supporting member,including a plurality of gas injection holes and a tapped hole openedtoward the supporting member, for providing a processing gas through thegas injection holes into a processing space formed between the electrodeplate and the supporting electrode, thereby generating a plasma in theprocessing space; and a fastening unit for combining the electrode platewith the supporting member by screwing into the tapped hole of theelectrode plate from a side of supporting member.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross sectional view of a plasma processor in accordancewith a first preferred embodiment of the present invention;

FIG. 2 is a schematic sectional view of an upper electrode of the plasmaprocessor of FIG. 1;

FIG. 3A is a plan view of an electrode plate of the upper electrode ofFIG. 2;

FIG. 3B is a sectional view taken along the line 3B-3B of FIG. 3A;

FIG. 4A is a plan view of a socket installed in a receptacle part of theelectrode plate of FIG. 3;

FIG. 4B is a side view of the socket of FIG. 4A;

FIG. 5A is a plan view of an electrode plate in accordance with a secondpreferred embodiment of the present invention;

FIG. 5B is a sectional view taken along the line 5B-5B of FIG. 5A;

FIG. 6A is a plan view of a holder installed in a receptacle part of theelectrode plate of FIG. 5;

FIG. 6B is a cross sectional view of the holder of FIG. 6A;

FIG. 7A is a plan view of a socket installed in the holder of FIG. 6;

FIG. 7B is a cross sectional view of the socket of FIG. 7A;

FIG. 8A is a cross sectional view showing a configuration of aconventional upper electrode;

FIG. 8B is a cross sectional view showing a configuration of anelectrode plate mounted to a supporting member in the conventional upperelectrode;

FIG. 8C is a cross sectional view showing a configuration process of ashield ring being mounted in the conventional upper electrode;

FIG. 9A is a plan view of the electrode plate with the socket shown inFIGS. 4A and 4B installed in the receptacle part of the electrode plateshown in FIGS. 3A and 3B;

FIG. 9B is a side view of the receptacle part with the socket shown inFIGS. 4A and 4B installed in the receptacle part shown in FIGS. 3A and3B; and

FIG. 10 is a cross sectional view of the receptacle part after theholder shown in FIGS. 6A and 6B and the socket shown in FIGS. 7A and 7Bare installed in the receptacle part shown in FIGS. 5A and 5B.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, a plasma processor electrode and a plasma processor inaccordance with a first preferred embodiment of the present inventionare described in detail with reference to FIGS. 1-7B.

In accordance with the first preferred embodiment, the plasma processor,e.g., a plasma etching processor 10, includes a processing vessel 11made of a conductive material such as aluminum, as shown in FIG. 1. Alower electrode 13, vertically movable by elevators 12, such aspneumatic cylinders, is installed in the processing vessel 11. The lowerelectrode 13 is configured to support a substrate W to be processed by aplurality of members made of, e.g., aluminum. A temperature controllingunit 14, such as a cooling jacket, is installed in the lower electrode13. The surface temperature of the substrate W, supported on the lowerelectrode 13, can be controlled to a desired temperature by thetemperature controlling unit 14.

The temperature controlling unit 14 includes an inlet line 15 and adischarge line 16 for circulating a refrigerant in the cooling jacket.The refrigerant, which has been controlled to a desired temperature, issupplied into the cooling jacket through the inlet line 15. After a heatexchange, the refrigerant is discharged to an outside through thedischarge line 16. Alternatively, a heater, a peltier element or thelike, instead of the cooling jacket, can be installed in the lowerelectrode 13.

An electrostatic chuck 17 for adsorptively holding the substrate W on anupper surface of the lower electrode 13 is mounted. The electrostaticchuck 17 includes a tungsten electrode layer which is interposed betweenlayers made of a sintered or a thermal-sprayed ceramic. By providing aDC high voltage from a variable voltage source 18 to the tungstenelectrode layer through a filter 19 and a lead line 20, the substrate Wmounted on the lower electrode 13 is electrostatically adsorbed to theceramic layers.

Moreover, a focus ring 21, having a ring shape, is so arranged as toencircle the substrate W which is adsorbedly supported on theelectrostatic chuck 17. The focus ring 21 is selectively made of aninsulating or a conductive material according to the type of process,and used to confine or diffuse reactive ions. Furthermore, a gas exhaustring 22 having a plurality of gas exhaust holes thereon is placed to belower than the surface of the lower electrode 13 in the lower electrode13 and the processing vessel 11, thereby encircling the lower electrode13. By the gas exhaust ring 22, the flow rate of the exhaust gas iscontrolled, while the plasma is suitably confined between the lowerelectrode 13 and an upper electrode 23 which will be describedhereinafter.

Above the lower electrode 13, the upper electrode 23 is installed to bespaced apart from the lower electrode 13 with a gap of 5 mm-150 mm, suchthat the lower electrode faces the upper electrode 23. The lowerelectrode 13, as described above, is vertically movable towards or awayfrom the upper electrode 23. The gap can be freely adjusted by drivingthe elevators 12 depending on the properties or the composition of thesubstrate W. Furthermore, a high frequency power supply 25 is connectedto the lower electrode 13 through an impedance matching unit 24including a blocking capacitor. A high frequency power (bias) of about 2to 13.56 MHz is supplied from the high frequency power supply 25 to thelower electrode 13. A high frequency power supply 27 is connected to theupper electrode 23 through an impedance matching unit 26 including ablocking capacitor. A high frequency power of about 13.56 to 100 MHz issupplied from the high frequency power supply 27 to the upper electrode23.

A processing gas feeding pipe 28 is connected to the upper electrode 23.A processing gas of, e.g., bromine is supplied from a processing gassupply source 29 into the processing vessel 11 through a flow ratecontrolling device 30 and the processing gas feeding pipe 28. Theprocessing gas provided into the processing vessel 11 becomes a plasmaby the high frequency power source 27, thereby executing an etchingprocess to the substrate W. Moreover, a vacuum preliminary chamber 32 isconnected to a side surface of the processing vessel 11 through a gatevalve 31, and the substrate W is transferred between the vacuumpreliminary chamber 32 and the processing vessel 11 by driving atransfer arm 33 provided in the vacuum preliminary chamber 32.

Hereinafter, the upper electrode 23 in accordance with the firstpreferred embodiment of the present invention will be described withreference to FIG. 2.

The upper electrode 23 has a laminated structure in which an uppermember 34, a cooling plate 35 and an electrode plate 36 are layered inthat order from the top as shown in FIG. 2, and ring-shaped insulators37 and 38 made of, e.g., alumina, are placed between the laminatedstructure and the processing vessel 11. The upper member 34, including agas supplying line 39 and a cooling jacket 40 therein, controls theelectrode plate 36 to be at a desired temperature through the coolingplate 35. The gas supplying line 39 extends downwards from the gasfeeding pipe 28, and the refrigerant circulates in the cooling jacket40. The gas supplying line 39 communicates with a space 41 formedbetween a lower surface of the upper member 34 and an upper surface ofthe cooling plate 35. The processing gas supplied from the gas supplyingline 39 is diffused in a horizontal direction in the space 41.

The cooling plate 35, having a disc shape, is made of, e.g., anodicoxidized aluminum. A plurality of gas supplying paths 35A whichcommunicate with a plurality of gas injection holes 36A of the electrodeplate 36 are disposed in a vertical direction in the cooling plate 35,as shown in FIG. 2. Thus, the processing gas diffused in the space 41passes through the gas supplying paths 35A and the gas injection holes36A in that order, thereby providing the processing gas to the substrateW in the processing vessel 11 uniformly, when the cooling plate 35 andthe electrode plate 36 are combined with each other.

Therefore, the electrode plate 36, having a disk shape, is made of,e.g., quartz, and an outer diameter thereof is adjusted to beapproximately equal to that of a lower surface of the cooling plate 35.The electrode plate 36 can provide the processing gas uniformly into theprocessing vessel 11 through the gas injection holes 36A which aredispersedly located on the surface of the electrode plate 36. Moreover,a plurality of through-holes 35B are formed outside of an area, whichsurrounds all the gas supplying paths 35A on the cooling plate 35, alonga peripheral direction. A screw 42 (a fastening unit) made of aluminum,stainless steel or the like is inserted into each of the through-holes35B. The electrode plate 36 and the cooling plate 35 are firmly joinedby screwing the screws 42 into sockets additionally provided in theelectrode plate 36. That is, the cooling plate 35 serves as a supportingmember for supporting the electrode plate 36.

The upper electrode 23 will be described in more detail with referenceto FIGS. 3A-4B. As shown in FIG. 3A, a plurality of thin- andlong-shaped grooves 43 (receptacle parts) are extended in radialdirections from the peripheral portion of the electrode plate 36 tovicinity areas of the gas injection holes 36A (opened toward acircumferential surface of the electrode plate 36). As shown in FIG. 3B,each of the grooves 43 includes an opening 43A and a breadth enlargedpart 43B. The opening 43A is opened toward the upper surface of theelectrode plate 36 and the breadth enlarged part 43B is widely disposedinside of the opening 43A. A step-attached part 43C is formed at aboundary portion between the opening 43A and the breadth enlarged part43B. A socket 44 shown in FIGS. 4A and 4B is installed in each of thegrooves 43 as shown in FIGS. 9A and 9B.

The socket 44, having a thin and long shape, is made of, e.g.,engineering plastic, desirably, polybenzimidazole, such as Cerazole (aproduct name). As shown in FIG. 4A, the socket 44 includes one endthereof (a lower end in FIG. 4A) having a circular arc shape and theother end thereof (an upper end in FIG. 4A) having a straight-lineshape. Moreover, a tapped hole 44A is placed on a side of said one end.Furthermore, as shown in FIGS. 4A and 4B, a flange 44B is located, in alongitudinal direction of the socket 44, at both side surfaces of thesocket 44. The socket 44 has a reversed-T front shape. The sockets 44can be attachably mounted to the electrode plate 36 byinserting/disjointing the socket 44 into/from the grooves 43 of theelectrode plate 36. Furthermore, the sockets 44 may be made of aluminum,stainless steel or the like, instead of engineering plastic.

As described above, a tapped hole 44A is located on an upper surface ofsaid one end of the socket 44 so that the tapped hole 44A can be viewedthrough the opening 43A of the electrode plate 36, while the sockets 44are attached to the grooves 43 (receptacle parts) of the electrode plate36. In other words, the upper electrode 23 in accordance with the firstpreferred embodiment of the present invention is configured such thatthe tapped holes 44A are additionally provided on the electrode plate 36by attaching the sockets 44 having the tapped holes 44A formed thereonto the electrode plate 36.

When the electrode plate 36 is mounted to the cooling plate 35, thetapped holes 44A of the sockets 44 accommodated in the openings 43A ofthe electrode plate 36 coincide with the through-holes 35B of thecooling plate 35 if viewed from a plane figure thereof. Moreover, whilebringing the upper surface of the electrode plate 36 into contact withthe lower surface of the cooling plate 35, the screws 42 (the fasteningunit) are inserted into the through-holes 35B from the side of the uppersurface of the cooling plate 35. By driving the screws 42 into thetapped holes 44A of the sockets 44, the cooling plate 35 and theelectrode plate 36 can be jointed.

As described above, since the sockets 44 are attached to the electrodeplate 36 such that the tapped holes 44A are opened toward a side of theupper surface of the electrode plate 36 and since the screws 42 arelocated at a region which is not exposed to the processing space (theplasma space), the screws 42 (the fastening unit) can be isolated fromthe plasma space. Furthermore, by directly hitching the flanges 44B ofthe sockets 44 to the step-attached part 43C of the electrode plate 36,the electrode plate 36 is firmly supported by the cooling plate 35.

A second preferred embodiment of the present invention will now bedescribed with reference to FIGS. 5A-7B. Same reference numerals areused in the second preferred embodiment as in the first preferredembodiment if they have same functions as those of the first preferredembodiment.

Similar to the electrode plate 36 of the first preferred embodiment asshown in FIGS. 3A and 3B, an electrode plate 36 in accordance with thesecond preferred embodiment, having a disk shape, is made of, e.g.,quartz, and has a plurality of gas injection holes 36A for supplying theprocessing gas into the processing vessel 11. As shown in FIGS. 5A and5B, a plurality of holes 45, with a nearly circular shape if viewed froma plane figure thereof, are formed around a peripheral portion of theelectrode plate 36. As shown in FIG. 5B, each of the holes 45 includes acircular-shaped opening 45A and a breadth enlarged part 45B having awider breadth in radial directions (an elliptic shape) than that of theopening 45A. A step-attached part 45C is formed at a boundary portionbetween the opening 45A and the breadth enlarged part 45B. Both a holder46 shown in FIGS. 6A and 6B and a socket 47 shown in FIGS. 7A and 7B areinstalled in each of the holes 45 as shown in FIG. 10. That is, theholes 45 serve as receptacle parts for supporting the sockets 47.

The holder 46 is made of, e.g., engineering plastic, desirably,polybenzimidazole, such as, e.g., Cerazole (a product name). As shown inFIGS. 6A and 6B, the holder 46 includes a first member 461 and a secondmember 462. The first and second members 461 and 462, having a shape ofcircular arc if viewed from a plane figure thereof, are disposedsymmetrically. Flanges 461A, 462A are formed on an outer peripheralportion of the first and second members 461 and 462, respectively.Step-attached parts 461B, 462B and coupling parts 461C, 462C composed ofnuts are formed on an inner peripheral portion of the first and secondmembers 461 and 462, respectively. The holder 46 is inserted into thehole 45 of the electrode plate 36, while the cross section 461D of thefirst member 461 faces the cross section 462D of the second member 462.Thereafter, the socket 47 shown in FIGS. 7A and 7B is inserted into aspatial part 48 which is surrounded by the first and second members 461and 462.

The socket 47 is formed into a single body, made of the same material asthat of the holder 46, e.g., engineering plastic, desirably,polybenzimidazole, such as Cerazole (a product name). As shown in FIGS.7A and 8B, the socket 47, including both a flange 47A and a screw part47B, has a nearly cylindrical shape. The screw part 47B is screwed intoa tapped hole surrounded by the coupling parts 461C and 462C.

By inserting the socket 47 into the spatial part 48 (the tapped hole)and by binding a jig, such as a screwdriver, into a groove 47C of thesocket 47 to impose a rotating force in an axial direction, the holder46 (the first and second members 461 and 462) becomes fixed after it isadjusted in a breadth direction in the hole 45. And, if the screw part47B of the socket 47 is coupled with (screwed into) the tapped holesurrounded by the coupling parts 461C and 462C, the flange 47A comesinto contact with the step-attached parts 461B and 462B, thereby fixingthe holder 46 and the socket 47 to the electrode plate 36.

As described above, the socket 47 is indirectly accommodated in the hole45 (the receptacle part) of the electrode plate 36 through the holder47. The holder 46 and the socket 47 can be made of aluminum, stainlesssteel or the like, instead of engineering plastic.

Meanwhile, because a tapped hole 47D is located in a center portion ofthe socket 47, the tapped holes 47D can be viewed from the upper surfaceof the electrode plate 36 (from the side of the cooling plate 35) whilethe holders 46 and the sockets 47 are inserted into the holes 45 of theelectrode plate 36.

The through-holes 35B formed on the cooling plate 35 correspond to theholes 45 of the electrode plate 36 (the tapped holes 47D of the sockets47) if viewed from a plane figure thereof. While the upper surface ofthe electrode plate 36, having the holders 46 and the sockets 47inserted thereinto, comes in contact with the lower surface of thecooling plate 35, a fastening member (a screw) is inserted into thethrough-holes 35B from the upper surface of the cooling plate 35 (theside on which the cooling plate 35 is mounted). The fastening member istightened into the tapped holes 47D, thereby jointing the cooling plate35 and the electrode plate 36.

By coupling the flanges 461A and 462A of the holder 46 with thestep-attached part 45C of the electrode plate 36, i.e., by indirectlycoupling the socket 47 with the step-attached part 45C, the electrodeplate 36 can be firmly supported by the cooling plate 35.

As described above, in accordance with the first and the secondpreferred embodiments, by forming the receptacle parts 43, 45 foraccommodating the sockets 44, 47 on the electrode plate 36, and byaccommodating the sockets 44, 47 having tapped holes 44A, 47D in thereceptacle parts 43, 45, the tapped hole can be additionally disposed onthe electrode plate 36 without directly forming the tapped hole on theelectrode plate 36. Since the screws are inserted from the side of thesupporting member (opposite side of the plasma space), the screws arenot exposed to the plasma space. Thus, no additional member forshielding the screws (shield ring) is required, and no surfaceirregularties are required in the processing vessel by simplifying acomplicated shape.

Consequently, the manufacturing costs are reduced and at the same time,the effective gas hole diameter can be increased by forming the gasinjection holes at the peripheral portion of the electrode plate.

It should be noted that, in accordance with each of the above-mentionedembodiments, the configuration of accommodating the sockets 44, 47 inthe receptacle parts after forming thin- and long-shaped grooves 43 orcircular-shaped holes 45 on the electrode plate 36 serving as thereceptacle parts, are explained, but the shape and the number of thereceptacle parts, the shape and the construction of the sockets and thelike are not confined to the above-mentioned embodiments if the socketshaving the tapped holes are opened toward the side where the supportingmember (the cooling plate) is mounted.

Furthermore, in accordance with each of the above-mentioned embodiments,the upper electrode, having a laminated structure of the upper member,the supporting member (the cooling plate) and the electrode plate, hasbeen described, but the upper member and the supporting member can beintegrated into a single body.

Moreover, in accordance with each of the above-mentioned embodiments,the configuration of the lower electrode for supporting the substrateand the electrode plate (the upper electrode) facing the lowerelectrode, arranged in a vertical direction in parallel, has beendescribed, but the present invention can be applied to a processor inwhich, for example, the two electrodes are placed apart in a horizontaldirection. Furthermore, the plasma processor, in which the highfrequency power is applied to both the upper electrode and the lowerelectrode, respectively, has been described, but the present inventioncan be adapted to a plasma processor in which the high frequency poweris applied to one of the electrodes (for example, the lower electrode).

Furthermore, in accordance with each of the above-mentioned embodiments,the parallel plate-type plasma etching processor has been explained, butthe present invention can be applied to various types of plasmaprocessors, e.g., magnetron-type, inductive coupling-type and the like.In addition, the present invention can be adapted to a variety of plasmaprocessors, such as an ashing processor, a film forming processor, orthe like, as well as the etching processor. Furthermore, the presentinvention can be adapted to a device for processing a glass substratefor LCD.

While the invention has been shown and described with respect to thepreferred embodiments, it will be understood by those skilled in the artthat various changes and modifications may be made without departingfrom the spirit and scope of the invention as defined in the followingclaims.

1. A plasma processor electrode comprising: a supporting member arrangedto face a supporting electrode for supporting a substrate to beprocessed; an electrode plate, mounted to the supporting member, forproviding a processing gas through a plurality of gas injection holesinto a processing space formed between the electrode plate and thesupporting electrode, thereby generating a plasma in the processingspace, the electrode plate including the gas injection holes and one ormore receptacle parts opened toward the supporting member; and fasteningmeans for combining the electrode plate with the supporting member byscrewing into a tapped hole provided in each receptacle part of theelectrode plate from a side of the supporting member, wherein eachreceptacle part does not include an opening on a surface of saidelectrode plate opposite to a surface facing said supporting member,wherein each receptacle part includes an opening that opens toward thesupporting member, and wherein a socket that includes the tapped hole isaccommodated in each receptacle part such that the tapped hole openstoward the opening, and wherein a holder including two members isprovided within each receptacle part, and the two members form areceptacle space in which the socket is accommodated.
 2. The plasmaprocessor electrode of claim 1, wherein each receptacle part is providedwith a step-attached part which is directly or indirectly coupled withthe socket.
 3. The plasma processor electrode of claim 1, wherein eachreceptacle part is formed on a peripheral portion of the electrode plateand is a long groove which is opened toward a circumferential surface ofthe electrode plate.
 4. The plasma processor electrode of claim 3,wherein the socket is inserted into and removed from the long groove ina longitudinal direction.
 5. The plasma processor electrode of claim 1,wherein each receptacle part is approximately of a circular hole whichis formed on a peripheral portion of the electrode plate.
 6. The plasmaprocessor electrode of claim 1, wherein the socket with the tapped holethat opens toward the opening is accommodated in each receptacle partthrough the holder.
 7. The plasma processor electrode of claim 6,wherein each receptacle part is provided with a step-attached part whichis coupled with the holder.
 8. The plasma processor electrode of claim1, wherein the two members forming the holder include screw parts, withthe socket being combined with a surface of the screw parts forming thereceptacle space.
 9. The plasma processor electrode of claim 8, whereinthe two members forming the holder are integrated and the holder isaccommodated in each receptacle part by screwing the socket into thescrew parts.
 10. A plasma processor comprising: a plasma processorelectrode including a supporting member arranged to face a supportingelectrode for supporting a substrate to be processed; an electrodeplate, mounted to the supporting member, for providing a processing gasthrough a plurality of gas injection holes into a processing spaceformed between the electrode plate and the supporting electrode, therebygenerating a plasma in the processing space, the electrode plateincluding the gas injection holes and one or more receptacle partsopened toward the supporting member; and fastening means for combiningthe electrode plate with the supporting member by screwing into a tappedhole provided in each receptacle part of the electrode plate from a sideof the supporting member, wherein each receptacle part does not includean opening on a surface of said electrode plate opposite to a surfacefacing said supporting member, wherein each receptacle part includes anopening that opens toward the supporting member, and wherein a socketthat includes the tapped hole is accommodated in each receptacle partsuch that the tapped hole opens toward the opening, wherein a holderincluding two members is provided within each receptacle part, and thetwo members form a receptacle space in which the socket is accommodated.11. The plasma processor of claim 10, wherein the electrode plate is soplaced as to be spaced apart from the supporting electrode forsupporting the substrate to be processed in a vertical direction. 12.The plasma processor electrode of claim 1, wherein the electrode plateis mounted to a lower surface of the supporting member, the electrodeplate is placed above the supporting electrode, and each receptacle partis disposed in an upper portion of the electrode plate.
 13. A plasmaprocessor electrode comprising: a supporting member configured to face asubstrate to be processed, said supporting member having a through-holeextending therethrough; an electrode plate having a plurality of gasinjection holes extending therethrough, said electrode plate beingmounted to said supporting member and configured to be provided betweensaid supporting member and the substrate to be processed, said electrodeplate having a receptacle on a surface facing said supporting member;and a fastener extending through said through-hole of said supportingmember and extending within said receptacle to join said electrode platewith said supporting member, wherein said receptacle does not include anopening on a surface of said electrode plate opposite to said surfacefacing said supporting member, wherein a socket that includes a tappedhole is provided within said receptacle, and wherein said fastener is ascrew engaged with said tapped hole of said socket, wherein a holderincluding two members is provided within said receptacle, and whereinsaid two members define a receptacle space therebetween in which saidsocket is accommodated.
 14. The plasma processor electrode of claim 13,wherein said receptacle is a groove that is opened toward acircumferential surface of said electrode plate, and wherein said socketis slidably inserted within said groove.
 15. The plasma processorelectrode of claim 1, wherein each receptacle part includes a breadthenlarged part that is disposed within the electrode plate below theopening that opens toward the supporting member, and wherein the breadthenlarged part is wider than the opening.
 16. The plasma processorelectrode of claim 1, wherein each receptacle part includes a steppedprofile defined by the opening and a breadth enlarged part that isdisposed below the opening.
 17. The plasma processor electrode of claim16, wherein each of the two members of the holder include a flangeportion that engages with the breadth enlarged part of the receptaclepart in which each holder is respectively disposed.
 18. The plasmaprocessor electrode of claim 13, wherein each receptacle includes abreadth enlarged part that is disposed within the electrode plate belowthe opening on the surface of the electrode plate, and wherein thebreadth enlarged part is wider than the opening.
 19. The plasmaprocessor electrode of claim 13, wherein each receptacle includes astepped profile defined by the opening and a breadth enlarged part thatis disposed below the opening.
 20. The plasma processor electrode ofclaim 19, wherein each of the two members of the holder include a flangeportion that engages with the breadth enlarged part of the receptacle inwhich each holder is respectively disposed.